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1

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

Malmros, Anna, Chen, Jr-Tai, Hjelmgren, Hans, Lu, Jun, Hultman, Lars, Kordina, Olof, Sveinbjornsson, Einar O., Zirath, Herbert, Rorsman, Niklas

Journal:

IEEE Transactions on Electron Devices

Année:

2019

Langue:

english

Fichier:

PDF, 1.75 MB

english, 2019

2

Statistical assessment and modeling of the effects of weather conditions on H2S plume dispersal from Icelandic geothermal power plants

Thorsteinsson, Throstur, Hackenbruch, Julia, Sveinbjörnsson, Einar, Jóhannsson, Thorsteinn

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 1.46 MB

english, 2013

3

Hydrogen passivation of gold in p -type silicon involving hydrogen-gold-related deep levels

Sveinbjörnsson, Einar Ö., Andersson, Gert I., Engström, Olof

Journal:

Physical Review B

Année:

1994

Langue:

english

Fichier:

PDF, 214 KB

english, 1994

4

Reaction kinetics of hydrogen-gold complexes in silicon

Sveinbjörnsson, Einar Ö., Engström, Olof

Journal:

Physical Review B

Année:

1995

Langue:

english

Fichier:

PDF, 589 KB

english, 1995

5

Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O)

Gudjónsson, G., Ólafsson, H.Ö., Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 565 KB

english, 2004

6

High Power-Density 4H-SiC RF MOSFETs

Gudjónsson, G., Allerstam, Fredrik, Ólafsson, H.Ö., Nilsson, Per Åke, Hjelmgren, Hans, Andersson, Kristoffer, Sveinbjörnsson, Einar Ö., Zirath, Herbert, Rödle, T., Jos, R.

Journal:

Materials Science Forum

Année:

2006

Langue:

english

Fichier:

PDF, 258 KB

english, 2006

7

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

Lee, Hyung Seok, Domeij, Martin, Zetterling, C.M., Ghandi, R., Östling, Mikael, Allerstam, Fredrik, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 429 KB

english, 2009

8

Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique

Tilak, Vinayak, Matocha, Kevin, Dunne, Greg, Allerstam, Fredrik, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 2.23 MB

english, 2009

9

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

Khosa, Rabia Y., Chen, J.T., Pálsson, K., Karhu, Robin, Hassan, Jawad, Rorsman, Niklas, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2019

Langue:

english

Fichier:

PDF, 711 KB

english, 2019

10

Hydrogen passivation of gold centers in silicon

Einar Ö. Sveinbjörnsson, Olof Engström

Journal:

Materials Science and Engineering: B

Année:

1996

Langue:

english

Fichier:

PDF, 343 KB

english, 1996

11

Room temperature electroluminescence from dislocation‐rich silicon

Sveinbjornsson, Einar O., Weber, Jorg

Journal:

Applied Physics Letters

Année:

1996

Langue:

english

Fichier:

PDF, 355 KB

english, 1996

12

Carrier Lifetime Controlling Defects Z 1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Booker, Ian D., Hassan, Jawad Ul, Lilja, Louise, Beyer, Franziska C., Karhu, Robin, Bergman, J. Peder, Danielsson, Örjan, Kordina, Olof, Sveinbjörnsson, Einar Ö., Janzén, Erik

Journal:

Crystal Growth & Design

Année:

2014

Langue:

english

Fichier:

PDF, 2.26 MB

english, 2014

13

Oxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTS

Booker, Ian D., Abdalla, Hassan, Lilja, Louise, Ul Hassan, Jawad, Bergman, Peder, Sveinbjörnsson, Einar Ö., Janzén, Erik

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 597 KB

english, 2014

14

Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiC

Winters, Michael, Thorsteinsson, E.B., Sveinbjörnsson, Einar Ö., Gislason, H.P., Hassan, Jawad, Janzén, Erik, Rorsman, Niklas

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 410 KB

english, 2014

15

A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface

Ólafsson, H.Ö., Sveinbjörnsson, Einar Ö., Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N.

Journal:

Materials Science Forum

Année:

2003

Langue:

english

Fichier:

PDF, 230 KB

english, 2003

16

High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment

Allerstam, Fredrik, Gudjónsson, G., Ólafsson, H.Ö., Sveinbjörnsson, Einar Ö., Rödle, T., Jos, R.

Journal:

Materials Science Forum

Année:

2005

Langue:

english

Fichier:

PDF, 367 KB

english, 2005

17

Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC

Allerstam, Fredrik, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 601 KB

english, 2009

18

A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen

Allerstam, Fredrik, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 313 KB

english, 2009

19

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material

Gudjónsson, G., Ólafsson, H.Ö., Allerstam, Fredrik, Nilsson, Per Åke, Sveinbjörnsson, Einar Ö., Rödle, T., Jos, R.

Journal:

Materials Science Forum

Année:

2005

Langue:

english

Fichier:

PDF, 201 KB

english, 2005

20

Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation

Allerstam, Fredrik, Gudjónsson, G., Sveinbjörnsson, Einar Ö., Rödle, T., Jos, R.

Journal:

Materials Science Forum

Année:

2007

Langue:

english

Fichier:

PDF, 328 KB

english, 2007

21

A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain

Lee, Hyung Seok, Domeij, Martin, Zetterling, C.M., Östling, Mikael, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2007

Langue:

english

Fichier:

PDF, 395 KB

english, 2007

22

Characterization of SiC MOS Structures using Conductance Spectroscopy and Capacitance Voltage Analysis

Sveinbjörnsson, Einar Ö., Ahnoff, M., Ólafsson, H.Ö.

Journal:

Materials Science Forum

Année:

2000

Fichier:

PDF, 371 KB

2000

23

Lithium-Gold-Related Photoluminescence in n-Type Silicon

Gislason, H.P., Kristjánsson, S., Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

1995

Fichier:

PDF, 393 KB

1995

24

A Comparison between SiO2/4H-SiC Interface Traps on (0001) and (11-20) Faces

Ólafsson, H.Ö., Hallin, Christer, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 363 KB

english, 2004

25

Phosphorus Diffusion Gettering of Gold in Silicon

Sveinbjörnsson, Einar Ö., Engström, Olof, Södervall, Ulf

Journal:

Materials Science Forum

Année:

1994

Fichier:

PDF, 421 KB

1994

26

Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs

Nilsson, Per Åke, Sudow, Mattias, Allerstam, Fredrik, Andersson, Kristoffer, Sveinbjörnsson, Einar Ö., Hjelmgren, Hans, Rorsman, Niklas

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 370 KB

english, 2009

27

Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps

Sveinbjörnsson, Einar Ö., Allerstam, Fredrik, Ólafsson, H.Ö., Gudjónsson, G., Dochev, D., Rödle, T., Jos, R.

Journal:

Materials Science Forum

Année:

2007

Langue:

english

Fichier:

PDF, 345 KB

english, 2007

28

Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique

Lysenko, V.S., Osiyuk, I.P., Rudenko, T.E., Tyagulski, I.P., Sveinbjörnsson, Einar Ö., Ólafsson, H.Ö.

Journal:

Materials Science Forum

Année:

2001

Fichier:

PDF, 338 KB

2001

29

High Frequency 4H-SiC MOSFETs

Gudjónsson, G., Allerstam, Fredrik, Nilsson, Per Åke, Hjelmgren, Hans, Sveinbjörnsson, Einar Ö., Zirath, Herbert, Rödle, T., Jos, R.

Journal:

Materials Science Forum

Année:

2007

Langue:

english

Fichier:

PDF, 258 KB

english, 2007

30

On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures

Ólafsson, H.Ö., Allerstam, Fredrik, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2002

Fichier:

PDF, 338 KB

2002

31

Hydrogen-Gold-Related Deep Levels in Crystalline Silicon

Sveinbjörnsson, Einar Ö., Engström, Olof

Journal:

Materials Science Forum

Année:

1994

Fichier:

PDF, 429 KB

1994

32

New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures

Ólafsson, H.Ö., Sveinbjörnsson, Einar Ö., Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N.

Journal:

Materials Science Forum

Année:

2002

Fichier:

PDF, 351 KB

2002

33

On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium

Sadeghi, M., Liss, B., Sveinbjörnsson, Einar Ö., Engström, O.

Journal:

Materials Science Forum

Année:

1998

Fichier:

PDF, 358 KB

1998

34

Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO2/4H-SiC Interface

Hermannsson, Pétur Gordon, Allerstam, Fredrik, Hauksson, Sigtryggur, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2013

Langue:

english

Fichier:

PDF, 262 KB

english, 2013

35

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

Sveinbjörnsson, Einar Ö., Ólafsson, H.Ö., Gudjónsson, G., Allerstam, Fredrik, Nilsson, Per Åke, Syväjärvi, Mikael, Yakimova, Rositza, Hallin, Christer, Rödle, T., Jos, R.

Journal:

Materials Science Forum

Année:

2005

Langue:

english

Fichier:

PDF, 189 KB

english, 2005

36

Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium

Hermannsson, Pétur Gordon, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2011

Langue:

english

Fichier:

PDF, 428 KB

english, 2011

37

Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers

Booker, I.D., Hassan, Jawad, Hallén, Anders, Sveinbjörnsson, Einar Ö., Kordina, Olof, Bergman, J. Peber

Journal:

Materials Science Forum

Année:

2012

Langue:

english

Fichier:

PDF, 331 KB

english, 2012

38

High Channel Mobility 4H-SiC MOSFETs

Sveinbjörnsson, Einar Ö., Gudjónsson, G., Allerstam, Fredrik, Ólafsson, H.Ö., Nilsson, Per Åke, Zirath, Herbert, Rödle, T., Jos, R.

Journal:

Materials Science Forum

Année:

2006

Langue:

english

Fichier:

PDF, 308 KB

english, 2006

39

Positron Annihilation Studies of Defects at the SiO2/SiC Interface

Dekker, James, Saarinen, Kimmo, Ólafsson, H.Ö., Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2003

Langue:

english

Fichier:

PDF, 308 KB

english, 2003

40

Passivation and Depassivation of Interface Traps at the SiO2/4H-SiC Interface by Potassium Ions

Hermannsson, Pétur Gordon, Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2012

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2012

41

Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy

Sveinbjörnsson, Einar Ö., Gíslason, Olafur

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 296 KB

english, 2014

42

Strong reduction in the density of interface states at the SiO 2 /4H-SiC interface after oxidation in the presence of alkali ions

Hermannsson, Pétur Gordon, Sveinbjörnsson, Einar Ö

Journal:

Physica Scripta

Année:

2012

Langue:

english

Fichier:

PDF, 552 KB

english, 2012

43

lithium-gold-related defect complexes in n-type silicon

Sveinbjörnsson, Einar Ö, Kristjánsson, Sigurgeir, Gislason, Haflidi P

Journal:

Physica Scripta

Année:

1994

Langue:

english

Fichier:

PDF, 408 KB

english, 1994

44

The 23rd Nordic Semiconductor Meeting

Ólafsson, Sveinn, Sveinbjörnsson, Einar

Journal:

Physica Scripta

Année:

2010

Langue:

english

Fichier:

PDF, 32 KB

english, 2010

45

Transformation of Gold in N-Type Silicon from a New Deep Level to the Gold Acceptor Level

SveinbjöRnsson, Einar Ö., Engström, Olof

Journal:

MRS Proceedings

Année:

1992

Langue:

english

Fichier:

PDF, 506 KB

english, 1992

46

Room Temperature Electroluminescence From D1 Dislocation Centers In Silicon

Sveinbjörnsson, Einar Ö, Weber, Jörg

Journal:

MRS Proceedings

Année:

1996

Langue:

english

Fichier:

PDF, 372 KB

english, 1996

47

Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation

Khosa, Rabia Y., Sveinbjörnsson, Einar Ö.

Journal:

Materials Science Forum

Année:

2017

Langue:

english

Fichier:

PDF, 813 KB

english, 2017

48

Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al

Khosa, Rabia Y., Sveinbjörnsson, Einar Ö., Winters, Michael, ul Hassan, Jawad, Karhu, Robin, Janzén, Erik, Rorsman, Niklas

Journal:

Materials Science Forum

Année:

2017

Langue:

english

Fichier:

PDF, 820 KB

english, 2017

49

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

Bergsten, Johan, Thorsell, Mattias, Adolph, David, Chen, Jr-Tai, Kordina, Olof, Sveinbjornsson, Einar O., Rorsman, Niklas

Journal:

IEEE Transactions on Electron Devices

Année:

2018

Langue:

english

Fichier:

PDF, 2.50 MB

english, 2018

50

CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers

Karhu, Robin, Sveinbjörnsson, Einar Ö., Magnusson, Björn, Ivanov, Ivan G., Danielsson, Örjan, Ul Hassan, Jawad

Journal:

Journal of Applied Physics

Année:

2019

Fichier:

PDF, 2.04 MB

2019